2007 fairchild semiconductor corporation fdfc3n108 rev c2 (w) fdfc3n108 n-channel 1.8v specified powertrench mosfet with schottky diode general description this n-channel 1.8v specified mosfet uses fairchild?s advanced low voltage powertrench process. it is combined with a low forward drop schottky that is isolat ed from the mosfet, providing a compact power solution for battery power management and dc/dc converter applications. applications battery management/charger application dc/dc conversion features 3 a, 20 v r ds(on) = 70 m w @ v gs = 4.5 v r ds(on) = 95 m w @ v gs = 2.5 v low gate charge high performance trench technology for extremely low r ds(on) d1 s2 g1 d2 s1 g2 supersot -6 tm pin 1 supersot ?-6 mosfet maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 20 v v gss gate -source voltage 12 v i d drain current ? continuous (note 1a) 3 a ? pulsed 12 maximum power dissipation (note 1a) 0.96 w (note 1b) 0.9 0 p d (note 1c) 0.7 0 t j , t stg operating and storage junction temperature range ?55 to +150 c schottky diode maximum ratings v rrm repetitive peak reverse voltage 20 v i o average forward current 2.0 a thermal characteristics r qja thermal resistance, junction-to -ambient (note 1a) 130 r qjc thermal resistance, junction-to - case (note 1) 60 c/w package marking and ordering information device marking device reel size tape width quantity .108 fdfc3n108 7?? 8mm 3000 units tm may 2007 fdfc3n108 n-channel 1.8v specified powertrench ? mosfet with schottky diode 1 3 2 4 5 6 a s g c nc d
fdfc3n108 rev c2 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 m a 20 v dbvdss dt j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c 12 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 m a i gss gate ?body leakage v gs = 12 v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 m a 0. 5 0.9 1.5 v dvgs(th) dt j gate threshold voltage temperature coefficient i d = 250 m a, referenced to 25 c ?3 mv/ c r ds(on) static drain?source on?resistance v gs = 4.5 v, i d = 3 a v gs = 2.5 v , i d = 2 .5 a v gs = 4.5 v, i d = 3 a, t j =125c 56 73 78 70 95 106 mw i d(on) on?state drain current v gs = 4.5 v, v ds = 5 v 12 a g fs forward transconductance v ds = 5 v, i d = 3 a 10 s dynamic characteristics c iss input capacitance 355 pf c oss output capacitance 85 pf c rss reverse transfer capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 45 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 2.0 w switching characteristics (note 2) t d(on) turn?on delay time 6 12 ns t r turn?on rise time 7 14 ns t d(off) turn?off delay time 20 36 ns t f turn?off fall time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 w 1 2 ns q g total gate charge 3.5 4.9 nc q gs gate ?source charge 0.7 nc q gd gate ?drain charge v ds = 10v, i d = 3 a, v gs = 4.5 v 1.0 nc drain? source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 0.8 a v sd drain?source diode forward voltage v gs = 0 v, i s = 0.8 a (note 2) 1.2 v t rr diode reverse recovery time 12 ns q rr diode reverse recovery charge i f = 3 a, d if /d t = 100 a/s 3 nc schottky diode characteristic t j = 25 o c 250 m a i r reverse leakage v r = 20v t j = 100 o c 10 ma v f forward voltage i f = 1a 363 425 mv i f = 2a 449 550 fdfc3n108 n-channel 1.8v specified powertrench ? mosfet with schottky diode
fdfc3n108 rev c2 (w) electrical characteristics t a = 25c unless otherwise noted notes: 1. r qja is the sum of the junction- to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is gu aranteed by design while r qca is determined by the user's board design. a) 130 c/w when mounted on a 0.125 in 2 pad of 2 oz. copper. b) 140 c/w when mounted on a .004 in 2 pad of 2 oz copper c) 180 c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300ms, duty cycle < 2.0% fdfc3n108 n-channel 1.8v specified powertrench ? mosfet with schottky diode
fdfc3n108 rev c2 (w) typical chara cteristics 0 1 2 3 4 5 6 0 0.5 1 1.5 v ds , drain-source voltage (v) i d , drain-source current (a) v gs = 4.5v 3.5v 2.5v 1.5v 3.0v 2.0v 0.8 1 1.2 1.4 1.6 1.8 0 1 2 3 4 5 6 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.0v 3.5v 4.5 v 3.0v 2.5v 4.0 v figure 1. on -region characteristics. figure 2. on -resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 3.0a v gs = 4.5v 0.03 0.055 0.08 0.105 0.13 0.155 0.18 0 2 4 6 8 10 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 1.5a t a = 125 o c t a = 25 o c figure 3. on -resistance variation with temperature. figure 4. on -resistance variation with gate-to-source voltage. 0 2 4 6 8 10 12 0.5 1 1.5 2 2.5 3 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdfc3n108 n-channel 1.8v specified powertrench ? mosfet with schottky diode
fdfc3n108 rev c2 (w) typical characteristics 0 1 2 3 4 5 0 1 2 3 4 5 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 3.0a v ds = -5v -10v -15v 0 100 200 300 400 500 0 5 10 15 20 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.001 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 1s 100ms 10ms 1ms 100 ms r ds(on) limit v gs = 4.5v single pulse r q ja = 180 o c/w t a = 25 o c 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 single pulse time (sec) power (w) single pulse r qja =180 o c/w t a = 25 o c figure 9. schottky diode forward voltage. figure 10. schottky diode reverse current. 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) * r q ja r q ja = 180 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b transient thermal response will change depending on the circuit board design. fdfc3n108 n-channel 1.8v specified powertrench ? mosfet with schottky diode
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